Structural, optical and electrical properties evaluation of Gadolinium-doped Zirconium Sulphide (ZrS/Gd) Thin Films prepared via electrostatic spray deposition for photonic and optoelectronic applications​

Materials NanoScience

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This study investigates the synthesis and characterization of Gadolinium-doped Zirconium Sulphide (ZrS/Gd) thin films via Electrostatic Spray Deposition (ESD) for optoelectronic and photonic uses. Films were prepared at Gd concentrations of 0.01, 0.02, and 0.03 mol and evaluated for their optical, electrical, and structural properties. UV–Vis analysis showed strong absorbance between 300–400 nm, peaking at 0.75 a.u for 0.01 mol. Bandgap values, derived from Tauc plots, increased from 3.19 eV (pristine) to 3.33 eV at 0.01 and 0.03 mol, while 0.02 mol showed 3.06 eV. Optical conductivity reached ~0.75 S/m, and the refractive index peaked near 3.8 eV photon energy. Electrical measurements revealed improved conductivity from 1.65 S/m (pristine) to 1.85 S/m, with corresponding resistivity decreasing from 0.61 Ω·m to 0.54 Ω·m at increased dopant molarity and thickness. XRD analysis showed increased crystallite size and reduced dislocation density, while SEM revealed uniform surface morphology with agglomerated nanoparticles. These findings confirm that Gd doping improves optical transparency, electrical conductivity, and structural integrity of ZrS thin films, suggesting strong potential for use in UV photodetectors, multicolour LEDs, solar-blind sensors, advanced display technologies, and other optoelectronics applications.